skim459gd12e4 ? by semikron rev. 3 ? 14.07.2011 1 skim ? 93 gd trench igbt modules skim459gd12e4 features ? igbt 4 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t s =25c 554 a t s =70c 450 a i cnom 450 a i crm i crm = 3xi cnom 1350 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t s =25c 438 a t s =70c 347 a i fnom 450 a i frm i frm = 3xi fnom 1350 a i fsm t p = 10 ms, sin 180, t j =25c 2430 a t j -40 ... 175 c module i t(rms) t terminal =80c 700 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =450a v ge =15v chiplevel t j =25c 1.85 2.10 v t j =150c 2.25 2.45 v v ce0 t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v t j =25c 2.3 2.7 m ? t j =150c 3.4 3.7 m ? v ge(th) v ge =v ce , i c =18ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 26.40 nf c oes f=1mhz 1.74 nf c res f=1mhz 1.41 nf q g v ge = - 8 v...+ 15 v 2550 nc r gint t j =25c 1.7 ? t d(on) v cc = 600 v i c =450a r g on =1.3 ? r g off =1.3 ? di/dt on = 8340 a/s di/dt off =3660a/s t j =150c 276 ns t r t j =150c 55 ns e on t j =150c 22 mj t d(off) t j =150c 538 ns t f t j =150c 114 ns e off t j =150c 57 mj r th(j-s) per igbt 0.092 k/w
skim459gd12e4 2 rev. 3 ? 14.07.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 450 a v ge =0v chip t j =25c 2.1 2.5 v t j =150c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 1.4 1.9 2.1 m ? t j =150c 2.2 2.6 2.8 m ? i rrm i f = 450 a di/dt off =8880a/s v ge =-15v v cc = 600 v t j =150c 570 a q rr t j =150c 80 c e rr t j =150c 40 mj r th(j-s) per diode 0.155 k/w module l ce 10 15 nh r cc'+ee' terminal-chip t s =25c 0.3 m ? t s =125c 0.5 m ? w 1042 g temperature sensor r 100 t sensor = 100 c (r 25 = 5 k ? )339 ? b 100/125 r (t) = r 100 exp[b 100/125 (1/t-1/373)]; t[k]; 4096 k skim ? 93 gd trench igbt modules skim459gd12e4 features ? igbt 4 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives
skim459gd12e4 ? by semikron rev. 3 ? 14.07.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skim459gd12e4 4 rev. 3 ? 14.07.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
skim459gd12e4 ? by semikron rev. 3 ? 14.07.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. skim 93 gd
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